deSouza, MM and Amaratunga, GAJ (1996) Monte Carlo study of the kickout mechanism of boron diffusion in silicon. J APPL PHYS, 79. pp. 2418-2425. ISSN 0021-8979
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | POINT-DEFECTS SYSTEM |
| Subjects: | UNSPECIFIED |
| Divisions: | UNSPECIFIED |
| Depositing User: | Cron job |
| Date Deposited: | 04 Feb 2015 22:29 |
| Last Modified: | 05 Feb 2015 00:40 |
| DOI: |
