deSouza, MM and Amaratunga, GAJ (1996) Monte Carlo study of the kickout mechanism of boron diffusion in silicon. J APPL PHYS, 79. pp. 2418-2425. ISSN 0021-8979
Full text not available from this repository.Item Type: | Article |
---|---|
Uncontrolled Keywords: | POINT-DEFECTS SYSTEM |
Subjects: | UNSPECIFIED |
Divisions: | Div B > Electronics, Power & Energy Conversion |
Depositing User: | Cron Job |
Date Deposited: | 17 Jul 2017 19:50 |
Last Modified: | 08 Apr 2021 06:40 |
DOI: |