deSouza, MM and Amaratunga, GAJ (1996) Monte Carlo study of the kickout mechanism of boron diffusion in silicon. J APPL PHYS, 79. pp. 2418-2425. ISSN 0021-8979
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | POINT-DEFECTS SYSTEM |
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Electronics, Power & Energy Conversion |
| Depositing User: | Unnamed user with email sms67@cam.ac.uk |
| Date Deposited: | 02 Sep 2016 18:06 |
| Last Modified: | 24 Sep 2016 22:40 |
| DOI: |
