deSouza, MM and Amaratunga, GAJ (1996) Monte Carlo study of the kickout mechanism of boron diffusion in silicon. J APPL PHYS, 79. pp. 2418-2425. ISSN 0021-8979
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | POINT-DEFECTS SYSTEM |
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Electronics, Power & Energy Conversion |
| Depositing User: | Cron Job |
| Date Deposited: | 09 Dec 2016 18:41 |
| Last Modified: | 24 Jun 2017 23:12 |
| DOI: |
