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THE EFFECT OF THE HOLE CURRENT ON THE CHANNEL INVERSION IN TRENCH INSULATED GATE BIPOLAR-TRANSISTORS (TIGBT)

UDREA, F and AMARATUNGA, GAJ and HUANG, Q (1994) THE EFFECT OF THE HOLE CURRENT ON THE CHANNEL INVERSION IN TRENCH INSULATED GATE BIPOLAR-TRANSISTORS (TIGBT). SOLID STATE ELECTRON, 37. pp. 507-514. ISSN 0038-1101

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Item Type: Article
Uncontrolled Keywords: ON-RESISTANCE
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 16 Jul 2015 13:08
Last Modified: 31 Jul 2015 22:18
DOI: