De Souza, MM and Amaratunga, GAJ (1994) A study of the configurations of boron in silicon using an empirical approach. Computational Materials Science, 3. pp. 69-77. ISSN 0927-0256Full text not available from this repository.
The configuration space of boron in silicon has been investigated using an empirical potential approach. This study indicates that energetically favourable configurations consist of a number of three-fold coordinated split interstitials. A configuration consisting of a four-fold boron-interstitial in combination with a two-fold silicon is found to be perfectly aligned in the <111> direction. This configuration in the positive charge state is a possibility for the boron interstitial related defect found via EPR and DLTS. © 1994.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron job|
|Date Deposited:||16 Jul 2015 14:01|
|Last Modified:||30 Nov 2015 16:43|