CUED Publications database

A study of the configurations of boron in silicon using an empirical approach

De Souza, MM and Amaratunga, GAJ (1994) A study of the configurations of boron in silicon using an empirical approach. Computational Materials Science, 3. pp. 69-77. ISSN 0927-0256

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Abstract

The configuration space of boron in silicon has been investigated using an empirical potential approach. This study indicates that energetically favourable configurations consist of a number of three-fold coordinated split interstitials. A configuration consisting of a four-fold boron-interstitial in combination with a two-fold silicon is found to be perfectly aligned in the <111> direction. This configuration in the positive charge state is a possibility for the boron interstitial related defect found via EPR and DLTS. © 1994.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:33
Last Modified: 08 Dec 2014 16:45
DOI: 10.1016/0927-0256(94)90154-6