CUED Publications database

Trench MOS-gated power devices

Amaratunga, GAJ (1994) Trench MOS-gated power devices. IEE Colloquium (Digest). ISSN 0963-3308

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MOS gated power devices are now available for power switching applications with voltage blocking requirements up to 1 kV and current ratings up to 300A. This is due to the invention of the IGBT, a device in which MOS gate turn-on leads to minority carrier injection to modulate the high resistance drift region required for voltage blocking. The paper presents current technologies being developed in order to expand the applications of MOS gated power devices. Also explained is the available trench gate technology that can be used to fabricate power devices.

Item Type: Article
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:52
Last Modified: 18 Feb 2021 15:18