Amaratunga, GAJ (1994) Trench MOS-gated power devices. IEE Colloquium (Digest). ISSN 0963-3308Full text not available from this repository.
MOS gated power devices are now available for power switching applications with voltage blocking requirements up to 1 kV and current ratings up to 300A. This is due to the invention of the IGBT, a device in which MOS gate turn-on leads to minority carrier injection to modulate the high resistance drift region required for voltage blocking. The paper presents current technologies being developed in order to expand the applications of MOS gated power devices. Also explained is the available trench gate technology that can be used to fabricate power devices.
|Depositing User:||Cron job|
|Date Deposited:||04 Feb 2015 23:09|
|Last Modified:||05 Feb 2015 01:28|