CUED Publications database

Analysis of SEB and SEGR in super-junction MOSFETs

Huang, S and Amaratunga, GAJ and Udrea, F (2000) Analysis of SEB and SEGR in super-junction MOSFETs. IEEE Transactions on Nuclear Science, 47. pp. 2640-2647. ISSN 0018-9499

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The electric field distribution in the super junction power MOSFET is analyzed using analytical modeling and numerical simulations in this paper. The single-event burn-out (SEB) and single-event gate rupture (SEGR) phenomena in this device are studied in detail. It is demonstrated that the super junction device is much less sensitive to SEB and SEGR compared to the standard power MOSFET. The physical mechanism is explained.

Item Type: Article
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:21
Last Modified: 04 Mar 2021 03:47
DOI: 10.1109/23.903820