Huang, S and Amaratunga, GAJ and Udrea, F (2000) Analysis of SEB and SEGR in super-junction MOSFETs. IEEE Transactions on Nuclear Science, 47. pp. 2640-2647. ISSN 0018-9499Full text not available from this repository.
The electric field distribution in the super junction power MOSFET is analyzed using analytical modeling and numerical simulations in this paper. The single-event burn-out (SEB) and single-event gate rupture (SEGR) phenomena in this device are studied in detail. It is demonstrated that the super junction device is much less sensitive to SEB and SEGR compared to the standard power MOSFET. The physical mechanism is explained.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||18 May 2016 18:37|
|Last Modified:||30 May 2016 05:39|