Udrea, F and Waind, PR and Thomson, J and Trajkovic, T and Chan, SSM and Huang, S and Amaratunga, GAJ (1999) 1.4 kV, 25 A, PT and NPT Trench IGBTs with optimum forward characteristics. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD). pp. 141-144.Full text not available from this repository.
In this paper we report the development of 1.4 kV 25 A PT and NPT Trench IGBTs with ultra-low on-resistance, latch-up free operation and highly superior overall performance when compared to previously reported DMOS IGBTs in the same class. We have fabricated both PT and transparent anode NPT devices to cover a wide range of applications which require very low on-state losses or very fast time with ultra-low switching losses. The minimum forward voltage drop at the standard current density of 100A/cm2 was 1.1 V for PT non-irradiated devices and 2.1 V for 16 MRad PT irradiated devices. The non-irradiated transparent emitter NPT structure has a typical forward voltage drop of 2.2 V, a turn-off time below 100 ns and turn-off energy losses of 11.2 mW/cm2 at 125 C. The maximum controllable current density was in excess of 1000A/cm2.
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|Date Deposited:||16 Jul 2015 14:15|
|Last Modified:||02 Sep 2015 21:20|