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p-MOS controlled lateral thyristor: A MOS controllable thyristor suitable for integration

Chen, W and Amaratunga, GAJ (1995) p-MOS controlled lateral thyristor: A MOS controllable thyristor suitable for integration. Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting. pp. 202-205.

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Abstract

A novel CMOS compatible lateral thyristor is proposed in this paper. Its thyristor conduction is fully controlled by a p-MOS gate. Loss of MOS control due to parasitic latch-up has been eliminated and triggering of the main thyristor at lower forward current achieved. The device operation has been verified by 2-D numerical simulations and experimental fabrication.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 16 Jul 2015 14:15
Last Modified: 02 Aug 2015 21:57
DOI: