Udrea, F and Trajkovic, T and Amaratunga, GAJ (2005) More oomph. European Semiconductor, 27. pp. 33-34. ISSN 0265-6027Full text not available from this repository.
An ingenious new CMOS-compatible process which promises to significantly improve the performance of power devices is discussed. A novel power device concept based on the use of high voltage regions suspended on thin semiconductor/dielectric membranes is reported. The membrane power devices are manufactured in a fully-CMOS compatible silicon-on-insulator (SOI) process followed by a bulk etching step and subsequent back-passivation. The concept is applicable to a class of high voltage devices such as LDMOSFETs, diodes, LIGBTs and superjunctions.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||18 May 2016 18:37|
|Last Modified:||24 Aug 2016 22:54|