Milne, WI and Teo, KBK and Chhowalla, M and Amaratunga, GAJ and Yuan, J and Robertson, J and Legagneux, P and Pirio, G and Bouzehouane, K and Pribat, D and Bruenger, W and Trautmann, C (2001) Investigating carbon materials for use as the electron emission source in a parallel electron-beam lithography system. Current Applied Physics, 1. pp. 317-320. ISSN 1567-1739Full text not available from this repository.
A microelectronic parallel electron-beam lithography system using an array of field emitting microguns is currently being developed. This paper investigates the suitability of various carbon based materials for the electron source in this device, namely tetrahedrally bonded amorphous carbon (ta-C), nanoclustered carbon and carbon nanotubes. Ta-C was most easily integrated into a gated field emitter structure and various methods, such as plasma and heavy ion irradiation, were used to induce emission sites in the ta-C. However, the creation of such emission sites at desired locations appeared to be difficult/random in nature and thus the material was unsuitable for this application. In contrast, nanoclustered carbon material readily field emits with a high site density but the by-products from the deposition process create integration issues when using the material in a microelectronic gated structure. Carbon nanotubes are currently the most promising candidate for use as the emission source. We have developed a high yield and clean (amorphous carbon by-product free) PECVD process to deposit single free standing nanotubes at desired locations with exceptional uniformity in terms of nanotube height and diameter. Field emission from an array of nanotubes was also obtained. © 2001 Elsevier Science B.V.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
Div B > Solid State Electronics and Nanoscale Science
|Depositing User:||Cron Job|
|Date Deposited:||09 Dec 2016 17:32|
|Last Modified:||23 Feb 2017 05:20|