Brezeanu, M and Butler, T and Rupesinghe, NL and Amaratunga, GAJ and Rashid, SJ and Udrea, F and Avram, M and Brezeanu, G (2007) Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes. Diamond and Related Materials, 16. pp. 1020-1024. ISSN 0925-9635Full text not available from this repository.
The promising theoretical properties of diamond, together with the recent advances in producing high-quality single crystal diamond substrates, have increased the interest in using diamond in power electronic devices. This paper presents numerical and experimental off-state results for a diamond Schottky barrier diode (SBD), one of most studied unipolar devices in diamond. Finding a suitable termination structure is an essential step towards designing a high voltage diamond device. The ramp oxide structure shows very encouraging electronic performance when used to terminate diamond SBDs. High-k dielectrics are also considered in order to further improve the reliability and electrical performance of the structure. © 2007 Elsevier B.V. All rights reserved.
|Uncontrolled Keywords:||Electronic device structures High power electronics p-type doping Schottky diodes|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 12:09|
|Last Modified:||09 Dec 2014 08:45|