Jang, JE and Cha, SN and Choi, Y and Butler, TP and Kang, DJ and Hasko, DG and Jung, JE and Kim, JM and Amaratunga, GAJ (2005) Nanoelectromechanical DRAM for ultra-large-scale integration (ULSI). Technical Digest - International Electron Devices Meeting, IEDM, 2005. pp. 261-264. ISSN 0163-1918Full text not available from this repository.
A Nanoelectromechanical (NEM) device developed for dynamic random access memory (DRAM) is reported. A vertical nanotube structure is employed to form the electromechanical switch and capacitor structure. The mechanical movement of the nanotube defines 'On' and 'OFF' states and the electrical signals which result lead to charge storage in a vertical capacitor structure as in a traditional DRAM. The vertical structure contributes greatly to a decrease in cell dimension. The main concept of the NEM switch and capacitor can be applied to other memory devices as well. © 2005 IEEE.
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|Date Deposited:||04 Feb 2015 22:07|
|Last Modified:||01 May 2015 19:07|