Brezeanu, G and Brezeanu, M and Boianceanu, C and Udrea, F and Amaratunga, GAJ and Godignon, P (2009) Impact of high-k dielectrics on breakdown performances of SiC and diamond Schottky diodes. Materials Science Forum, 600-60. pp. 983-986. ISSN 0255-5476Full text not available from this repository.
This paper presents a comparison between SiC and diamond Schottky barrier diodes using the oxide ramp termination. The influences of the dielectric thickness and relative permittivity on the diode's electrical performance are investigated. Typical commercial drift layer parameters are used for this study. The extension of the space charge area throughout the drift region and the current distribution at breakdown are shown. The efficiency of the termination is also evaluated for both SiC and diamond diodes. © (2009) Trans Tech Publications, Switzerland.
|Uncontrolled Keywords:||Diamond Edge termination High-k dielectric Schottky diode|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 11:48|
|Last Modified:||27 Nov 2014 19:25|