CUED Publications database

Single crystal diamond schottky diodes - Practical design considerations for enhanced device performance

Rashid, SJ and Udrea, F and Twitchen, DJ and Balmer, RS and Amaratunga, GAJ (2008) Single crystal diamond schottky diodes - Practical design considerations for enhanced device performance. IET Seminar Digest, 2008.

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Abstract

Novel alternatives to the conventional single crystal diamond Schottky metal-intrinsic-p+ (m-i-p+) diode is presented in this work. The conduction mechanism of the device is analysed and structural modifications to enhance its performance are proposed. The periodic inclusion of highly p+ doped thin δ-layers and p+ spots in the intrinsic voltage blocking layer of the diode drastically improves the forward performance of these devices enhancing the forward current of the device by a factor of 10 - 17 with a maximum forward current density of ̃ 40 A/cm 2 for a 2 kV device.

Item Type: Article
Uncontrolled Keywords: δ-doped Diamond High energy implanted devices Schottky diode
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:09
Last Modified: 27 Nov 2014 19:25
DOI: 10.1049/ic:20080186