Rashid, SJ and Udrea, F and Twitchen, DJ and Balmer, RS and Amaratunga, GAJ (2008) Single crystal diamond schottky diodes - Practical design considerations for enhanced device performance. IET Seminar Digest, 2008.Full text not available from this repository.
Novel alternatives to the conventional single crystal diamond Schottky metal-intrinsic-p+ (m-i-p+) diode is presented in this work. The conduction mechanism of the device is analysed and structural modifications to enhance its performance are proposed. The periodic inclusion of highly p+ doped thin δ-layers and p+ spots in the intrinsic voltage blocking layer of the diode drastically improves the forward performance of these devices enhancing the forward current of the device by a factor of 10 - 17 with a maximum forward current density of ̃ 40 A/cm 2 for a 2 kV device.
|Uncontrolled Keywords:||δ-doped Diamond High energy implanted devices Schottky diode|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 12:09|
|Last Modified:||27 Nov 2014 02:48|