Trajkovic, T and Waind, PR and Thomson, J and Udrea, F and Yuan, X and Huang, S and Milne, WI and Amaratunga, GAJ and Crees, DE (1999) Optimum design of 1.4KV trench IGBTs - The next generation of high power switching devices. IEE Colloquium (Digest). pp. 53-56. ISSN 0963-3308Full text not available from this repository.
The Trench Insulated Gate Bipolar Transistor (IGBT) is the most promising structure for the next generation of power semiconductor devices with wide applications ranging from motor control (1-4 kV) to HVDC (6.5 kV). Here we present for the first time an optimum design of a 1.4kV Trench IGBT using a new, fully integrated optimisation system comprising process and device simulators and the RSM optimiser. The use of this new TCAD system has contributed largely to realizing devices with characteristics far superior to the previous DMOS generation of IGBTs. Full experimental results on 1.4kV Trench IGBTs which are in excellent agreement with the TCAD predictions are reported.
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