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Direct growth of horizontally aligned carbon nanotubes between electrodes and its application to field-effect transistors

Hayashi, Y and Jang, B and Iijima, T and Tokunaga, T and Afre, RA and Tanemura, M and Amaratunga, GAJ (2010) Direct growth of horizontally aligned carbon nanotubes between electrodes and its application to field-effect transistors. INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. pp. 215-216.

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Abstract

This paper presents direct growth of horizontally aligned carbon nanotubes (CNTs) between two predefined various inter-spacing up to tens of microns of electrodes (pads) and its use as CNT field-effect transistors (CNT-FETs). The catalytic metals were prepared, consisting of iron (Fe), aluminum (Al) and platinum (Pt) triple layers, on the thermal silicon oxide substrate (Pt/Al/Fe/SiO2). Scanning electron microscopy measurements of CNT-FETs from the as-grown samples showed that over 80% of the nanotubes are grown across the catalytic electrodes. Moreover, the number of CNTs across the catalytic electrodes is roughly controllable by adjusting the growth condition. The Al, as the upper layer on Fe electrode, not only plays a role as a barrier to prevent vertical growth but also serves as a porous medium that helps in forming smaller nano-sized Fe particles which would be necessary for lateral growth of CNTs. Back-gate field effect transistors were demonstrated with the laterally aligned CNTs. The on/off ratios in all the measured devices are lower than 100 due to the drain leakage current. ©2010 IEEE.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:09
Last Modified: 27 Nov 2014 19:25
DOI: 10.1109/INEC.2010.5424640