Yong, JCL and Rorison, JM and White, IH (2002) 1.3-μm Quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: A theoretical study. IEEE Journal of Quantum Electronics, 38. pp. 1553-1564. ISSN 0018-9197Full text not available from this repository.
Due to the keen interest in improving the high-speed and high-temperature performance of 1.3-μm wavelength lasers, we compare, for the first time, the material gain of three different competing active layer materials, namely InGaAsP-InGaAsP, AlGaInAs-AlGaInAs, and InGaAsN-GaAs. We present a theoretical study of the gain of each quantum-well material system and present the factors that influence the material gain performance of each system. We find that AIGaInAs and InGaAsN active layer materials have substantially better material gain performance than the commonly used InGaAsP, both at room temperature and at high temperature.
|Uncontrolled Keywords:||Material gain Quantum wells Semiconductor laser|
|Divisions:||Div B > Photonics|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 11:22|
|Last Modified:||08 Dec 2014 02:32|