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Surface-stress-induced Mott transition and nature of associated spatial phase transition in single crystalline VO2 nanowires.

Sohn, JI and Joo, HJ and Ahn, D and Lee, HH and Porter, AE and Kim, K and Kang, DJ and Welland, ME (2009) Surface-stress-induced Mott transition and nature of associated spatial phase transition in single crystalline VO2 nanowires. Nano Lett, 9. pp. 3392-3397.

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Abstract

We demonstrate that the Mott metal-insulator transition (MIT) in single crystalline VO(2) nanowires is strongly mediated by surface stress as a consequence of the high surface area to volume ratio of individual nanowires. Further, we show that the stress-induced antiferromagnetic Mott insulating phase is critical in controlling the spatial extent and distribution of the insulating monoclinic and metallic rutile phases as well as the electrical characteristics of the Mott transition. This affords an understanding of the relationship between the structural phase transition and the Mott MIT.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:24
Last Modified: 28 Jul 2014 01:08
DOI: 10.1021/nl900841k

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