Sohn, JI and Choi, SS and Morris, SM and Bendall, JS and Coles, HJ and Hong, WK and Jo, G and Lee, T and Welland, ME (2010) Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor. Nano Lett, 10. pp. 4316-4320.Full text not available from this repository.
We demonstrate a room temperature processed ferroelectric (FE) nonvolatile memory based on a ZnO nanowire (NW) FET where the NW channel is coated with FE nanoparticles. A single device exhibits excellent memory characteristics with the large modulation in channel conductance between ON and OFF states exceeding 10(4), a long retention time of over 4 × 10(4) s, and multibit memory storage ability. Our findings provide a viable way to create new functional high-density nonvolatile memory devices compatible with simple processing techniques at low temperature for flexible devices made on plastic substrates.
|Uncontrolled Keywords:||Computer Storage Devices Equipment Design Equipment Failure Analysis Materials Testing Nanostructures Nanotechnology Particle Size Signal Processing, Computer-Assisted Transistors, Electronic Zinc Oxide|
|Divisions:||Div B > Photonics|
|Depositing User:||Cron Job|
|Date Deposited:||28 Oct 2011 16:36|
|Last Modified:||20 Jan 2014 01:12|
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