CUED Publications database

Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor.

Sohn, JI and Choi, SS and Morris, SM and Bendall, JS and Coles, HJ and Hong, WK and Jo, G and Lee, T and Welland, ME (2010) Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor. Nano Lett, 10. pp. 4316-4320.

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Abstract

We demonstrate a room temperature processed ferroelectric (FE) nonvolatile memory based on a ZnO nanowire (NW) FET where the NW channel is coated with FE nanoparticles. A single device exhibits excellent memory characteristics with the large modulation in channel conductance between ON and OFF states exceeding 10(4), a long retention time of over 4 × 10(4) s, and multibit memory storage ability. Our findings provide a viable way to create new functional high-density nonvolatile memory devices compatible with simple processing techniques at low temperature for flexible devices made on plastic substrates.

Item Type: Article
Uncontrolled Keywords: Computer Storage Devices Equipment Design Equipment Failure Analysis Materials Testing Nanostructures Nanotechnology Particle Size Signal Processing, Computer-Assisted Transistors, Electronic Zinc Oxide
Subjects: UNSPECIFIED
Divisions: Div B > Photonics
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:24
Last Modified: 30 Jun 2014 01:09
DOI: 10.1021/nl1013713

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