Sohn, JI and Choi, SS and Morris, SM and Bendall, JS and Coles, HJ and Hong, WK and Jo, G and Lee, T and Welland, ME (2010) Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor. Nano Lett, 10. pp. 4316-4320.
Full text not available from this repository.Abstract
We demonstrate a room temperature processed ferroelectric (FE) nonvolatile memory based on a ZnO nanowire (NW) FET where the NW channel is coated with FE nanoparticles. A single device exhibits excellent memory characteristics with the large modulation in channel conductance between ON and OFF states exceeding 10(4), a long retention time of over 4 × 10(4) s, and multibit memory storage ability. Our findings provide a viable way to create new functional high-density nonvolatile memory devices compatible with simple processing techniques at low temperature for flexible devices made on plastic substrates.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Computer Storage Devices Equipment Design Equipment Failure Analysis Materials Testing Nanostructures Nanotechnology Particle Size Signal Processing, Computer-Assisted Transistors, Electronic Zinc Oxide |
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Photonics |
| Depositing User: | Cron Job |
| Date Deposited: | 28 Oct 2011 16:36 |
| Last Modified: | 18 May 2013 19:04 |
| DOI: | 10.1021/nl1013713 |
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