Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors.

Hong, WK and Sohn, JI and Hwang, DK and Kwon, SS and Jo, G and Song, S and Kim, SM and Ko, HJ and Park, SJ and Welland, ME and Lee, T (2008) Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors. Nano Lett, 8. pp. 950-956. ISSN 1530-6984

Abstract

Surface-architecture-controlled ZnO nanowires were grown using a vapor transport method on various ZnO buffer film coated c-plane sapphire substrates with or without Au catalysts. The ZnO nanowires that were grown showed two different types of geometric properties: corrugated ZnO nanowires having a relatively smaller diameter and a strong deep-level emission photoluminescence (PL) peak and smooth ZnO nanowires having a relatively larger diameter and a weak deep-level emission PL peak. The surface morphology and size-dependent tunable electronic transport properties of the ZnO nanowires were characterized using a nanowire field effect transistor (FET) device structure. The FETs made from smooth ZnO nanowires with a larger diameter exhibited negative threshold voltages, indicating n-channel depletion-mode behavior, whereas those made from corrugated ZnO nanowires with a smaller diameter had positive threshold voltages, indicating n-channel enhancement-mode behavior.

Actions (login required)