Yoon, J and Hong, WK and Jo, M and Jo, G and Choe, M and Park, W and Sohn, JI and Nedic, S and Hwang, H and Welland, ME and Lee, T (2011) Nonvolatile memory functionality of ZnO nanowire transistors controlled by mobile protons. ACS Nano, 5. pp. 558-564.Full text not available from this repository.
We demonstrated the nonvolatile memory functionality of ZnO nanowire field effect transistors (FETs) using mobile protons that are generated by high-pressure hydrogen annealing (HPHA) at relatively low temperature (400 °C). These ZnO nanowire devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. We show that the memory characteristics are attributed to the movement of protons between the Si/SiO(2) interface and the SiO(2)/ZnO nanowire interface by the applied gate electric field. The memory mechanism is explained in terms of the tuning of interface properties, such as effective electric field, surface charge density, and surface barrier potential due to the movement of protons in the SiO(2) layer, consistent with the UV photoresponse characteristics of nanowire memory devices. Our study will further provide a useful route of creating memory functionality and incorporating proton-based storage elements onto a modified CMOS platform for FET memory devices using nanomaterials.
|Uncontrolled Keywords:||Electricity Hydrogen Motion Nanotechnology Nanowires Pressure Protons Silicon Silicon Dioxide Surface Properties Temperature Transistors, Electronic Zinc Oxide|
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 11:24|
|Last Modified:||28 Jul 2014 01:08|
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