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Direct observation of the structural component of the metal-insulator phase transition and growth habits of epitaxially grown VO2 nanowires.

Sohn, JI and Joo, HJ and Porter, AE and Choi, CJ and Kim, K and Kang, DJ and Welland, ME (2007) Direct observation of the structural component of the metal-insulator phase transition and growth habits of epitaxially grown VO2 nanowires. Nano Lett, 7. pp. 1570-1574. ISSN 1530-6984

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Abstract

We have grown epitaxially orientation-controlled monoclinic VO2 nanowires without employing catalysts by a vapor-phase transport process. Electron microscopy results reveal that single crystalline VO2 nanowires having a [100] growth direction grow laterally on the basal c plane and out of the basal r and a planes of sapphire, exhibiting triangular and rectangular cross sections, respectively. In addition, we have directly observed the structural phase transition of single crystalline VO2 nanowires between the monoclinic and tetragonal phases which exhibit insulating and metallic properties, respectively, and clearly analyzed their corresponding relationships using in situ transmission electron microscopy.

Item Type: Article
Uncontrolled Keywords: Crystallization Electric Wiring Equipment Design Equipment Failure Analysis Macromolecular Substances Materials Testing Molecular Conformation Nanotechnology Nanotubes Particle Size Phase Transition Surface Properties Vanadium Compounds
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:23
Last Modified: 18 Aug 2014 01:03
DOI: 10.1021/nl070439q

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