Robertson, J and Lin, L (2011) Defect gap states on III-V semiconductor-oxide interfaces (invited). In: UNSPECIFIED pp. 1440-1443..
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| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
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| Uncontrolled Keywords: | GaAs Oxide Calculation Interface states Passivation FET ATOMIC-LAYER-DEPOSITION SCANNING-TUNNELING-MICROSCOPY FIELD-EFFECT TRANSISTORS COMPOUND SEMICONDUCTORS ELECTRONIC-STRUCTURE GAAS DIELECTRICS PASSIVATION SURFACE STABILITY |
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| Subjects: | UNSPECIFIED |
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| Divisions: | UNSPECIFIED |
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| Depositing User: | Cron Job |
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| Date Deposited: | 19 Jan 2012 10:11 |
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| Last Modified: | 20 May 2013 01:31 |
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| DOI: | 10.1016/j.mee.2011.03.134 |
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