ROBERTSON, J (1995) MECHANISM OF BIAS-ENHANCED NUCLEATION AND HETEROEPITAXY OF DIAMOND ON SI. In: UNSPECIFIED pp. 549-552..
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| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
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| Uncontrolled Keywords: | NUCLEATION MICROWAVE PLASMA CVD ION-ASSISTED DEPOSITION SUBSTRATE BIAS CHEMICAL VAPOR-DEPOSITION STRESS-INDUCED FORMATION CUBIC BORON-NITRIDE THIN-FILMS GROWTH SILICON SURFACE GRAPHITE EROSION CARBON |
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| Subjects: | UNSPECIFIED |
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| Divisions: | UNSPECIFIED |
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| Depositing User: | Cron Job |
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| Date Deposited: | 19 Jan 2012 11:12 |
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| Last Modified: | 20 May 2013 01:35 |
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| DOI: | |
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