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MECHANISM OF BIAS-ENHANCED NUCLEATION AND HETEROEPITAXY OF DIAMOND ON SI

ROBERTSON, J (1995) MECHANISM OF BIAS-ENHANCED NUCLEATION AND HETEROEPITAXY OF DIAMOND ON SI. In: UNSPECIFIED pp. 549-552..

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: NUCLEATION MICROWAVE PLASMA CVD ION-ASSISTED DEPOSITION SUBSTRATE BIAS CHEMICAL VAPOR-DEPOSITION STRESS-INDUCED FORMATION CUBIC BORON-NITRIDE THIN-FILMS GROWTH SILICON SURFACE GRAPHITE EROSION CARBON
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 16 Jul 2015 13:47
Last Modified: 27 Aug 2015 21:20
DOI: