CUED Publications database

Importance of oxygen vacancies in high K gate dielectrics

Robertson, J and Xiong, K and Tse, KY (2007) Importance of oxygen vacancies in high K gate dielectrics. In: UNSPECIFIED pp. 97-100..

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: high K oxide oxygen vacancy metal gate work function BAND ALIGNMENT OXIDES SI INSTABILITY TECHNOLOGY DEVICES
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 15 Dec 2015 13:45
Last Modified: 10 Feb 2016 22:32
DOI: