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Breakdown Voltage for Superjunction Power Devices With Charge Imbalance: An Analytical Model Valid for Both Punch Through and Non Punch Through Devices

Wang, H and Napoli, E and Udrea, F (2009) Breakdown Voltage for Superjunction Power Devices With Charge Imbalance: An Analytical Model Valid for Both Punch Through and Non Punch Through Devices. IEEE T ELECTRON DEV, 56. pp. 3175-3183. ISSN 0018-9383

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Item Type: Article
Uncontrolled Keywords: Analytical model charge imbalance (CI) power semiconductor devices semiconductor device modeling SJ modeling superjunction (SJ) RESISTANCE MOSFET
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 16 Jul 2015 13:40
Last Modified: 02 Sep 2015 00:46
DOI: 10.1109/TED.2009.2032595