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An analytical model for the lateral insulated gate bipolar transistor (LIGBT) on thin SOI

Pathirana, V and Napoli, E and Udrea, F and Gamage, S (2006) An analytical model for the lateral insulated gate bipolar transistor (LIGBT) on thin SOI. IEEE T POWER ELECTR, 21. pp. 1521-1528. ISSN 0885-8993

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Item Type: Article
Uncontrolled Keywords: insulated gate bipolar transistor (IGBT) modeling power integrated circuits (ICs) power semiconductor devices semiconductor switches IGBT INVERSION LAYER
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 16 Jul 2015 13:10
Last Modified: 26 Jul 2015 00:03
DOI: 10.1109/TPEL.2006.882976