Bu, IYY and Flewitt, AJ and Milne, WI (2011) High mobility, bottom gate, nanocrystalline silicon thin film transistors incorporating a nitrogenated incubation layer. CURR APPL PHYS, 11. pp. 171-175. ISSN 1567-1739
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| Item Type: | Article |
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| Uncontrolled Keywords: | Low temperature Layer-by-layer Nitrogenation Nanocrystalline silicon MICROCRYSTALLINE SILICON STRUCTURAL-PROPERTIES AMORPHOUS-SILICON PLASMA GROWTH DEPOSITION CVD |
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| Subjects: | UNSPECIFIED |
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| Divisions: | UNSPECIFIED |
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| Depositing User: | Cron Job |
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| Date Deposited: | 20 Dec 2011 12:10 |
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| Last Modified: | 16 May 2013 19:19 |
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| DOI: | 10.1016/j.cap.2010.07.001 |
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