CUED Publications database

High mobility, bottom gate, nanocrystalline silicon thin film transistors incorporating a nitrogenated incubation layer

Bu, IYY and Flewitt, AJ and Milne, WI (2011) High mobility, bottom gate, nanocrystalline silicon thin film transistors incorporating a nitrogenated incubation layer. CURR APPL PHYS, 11. pp. 171-175. ISSN 1567-1739

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Item Type: Article
Uncontrolled Keywords: Low temperature Layer-by-layer Nitrogenation Nanocrystalline silicon MICROCRYSTALLINE SILICON STRUCTURAL-PROPERTIES AMORPHOUS-SILICON PLASMA GROWTH DEPOSITION CVD
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 18 May 2016 17:51
Last Modified: 25 Jun 2016 01:33
DOI: 10.1016/j.cap.2010.07.001