Robertson, J (2000) Deposition mechanism of hydrogenated amorphous silicon. J APPL PHYS, 87. pp. 2608-2617. ISSN 0021-8979
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| Item Type: | Article |
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| Uncontrolled Keywords: | A-SI-H CHEMICAL VAPOR-DEPOSITION DEFECT-POOL MODEL FILM GROWTH PLASMA DEPOSITION TEMPERATURE-DEPENDENCE CRYSTALLINE SILICON SURFACE-REACTIONS ION-BOMBARDMENT SILANE PLASMA |
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| Subjects: | UNSPECIFIED |
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| Divisions: | UNSPECIFIED |
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| Depositing User: | Cron Job |
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| Date Deposited: | 19 Jan 2012 10:11 |
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| Last Modified: | 27 May 2013 01:19 |
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| DOI: | |
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