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Control of schottky barrier heights on high-k gate dielectrics for future complementary metal-oxide semiconductor devices

Tse, KY and Robertson, J (2007) Control of schottky barrier heights on high-k gate dielectrics for future complementary metal-oxide semiconductor devices. PHYS REV LETT, 99. -. ISSN 0031-9007

Full text not available from this repository.
Item Type: Article
Uncontrolled Keywords: 0001 SURFACE INTERFACES FILMS TECHNOLOGY
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:32
Last Modified: 24 Mar 2014 01:16
DOI: 10.1103/PhysRevLett.99.086805

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