Luo, XR and Lei, TF and Wang, YG and Zhang, B and Udrea, F (2010) A Novel High Voltage SOI LDMOS with Buried N-layer in a Self-isolation High Voltage Integrated Circuit. In: UNSPECIFIED pp. 265-268..
Full text not available from this repository.| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Uncontrolled Keywords: | BREAKDOWN VOLTAGE TECHNOLOGY DEVICES TRENCH MOSFET |
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Electronics, Power & Energy Conversion |
| Depositing User: | Cron Job |
| Date Deposited: | 09 Dec 2016 17:29 |
| Last Modified: | 27 Jun 2017 23:43 |
| DOI: |
