CUED Publications database

A Novel High Voltage SOI LDMOS with Buried N-layer in a Self-isolation High Voltage Integrated Circuit

Luo, XR and Lei, TF and Wang, YG and Zhang, B and Udrea, F (2010) A Novel High Voltage SOI LDMOS with Buried N-layer in a Self-isolation High Voltage Integrated Circuit. In: UNSPECIFIED pp. 265-268..

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: BREAKDOWN VOLTAGE TECHNOLOGY DEVICES TRENCH MOSFET
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:47
Last Modified: 27 Oct 2014 01:05
DOI: