CUED Publications database

A Novel High Voltage SOI LDMOS with Buried N-layer in a Self-isolation High Voltage Integrated Circuit

Luo, XR and Lei, TF and Wang, YG and Zhang, B and Udrea, F (2010) A Novel High Voltage SOI LDMOS with Buried N-layer in a Self-isolation High Voltage Integrated Circuit. In: UNSPECIFIED pp. 265-268..

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: BREAKDOWN VOLTAGE TECHNOLOGY DEVICES TRENCH MOSFET
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 16 Jul 2015 13:09
Last Modified: 27 Aug 2015 21:30
DOI: