Luo, XR and Lei, TF and Wang, YG and Zhang, B and Udrea, F (2010) A Novel High Voltage SOI LDMOS with Buried N-layer in a Self-isolation High Voltage Integrated Circuit. In: UNSPECIFIED pp. 265-268..
Full text not available from this repository.Item Type: | Conference or Workshop Item (UNSPECIFIED) |
---|---|
Uncontrolled Keywords: | BREAKDOWN VOLTAGE TECHNOLOGY DEVICES TRENCH MOSFET |
Subjects: | UNSPECIFIED |
Divisions: | Div B > Electronics, Power & Energy Conversion |
Depositing User: | Cron Job |
Date Deposited: | 17 Jul 2017 19:26 |
Last Modified: | 13 Apr 2021 08:47 |
DOI: |