Luo, XR and Lei, TF and Wang, YG and Zhang, B and Udrea, F (2010) A Novel High Voltage SOI LDMOS with Buried N-layer in a Self-isolation High Voltage Integrated Circuit. In: UNSPECIFIED pp. 265-268..
Full text not available from this repository.
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
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| Uncontrolled Keywords: | BREAKDOWN VOLTAGE TECHNOLOGY DEVICES TRENCH MOSFET |
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| Subjects: | UNSPECIFIED |
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| Divisions: | Div B > Electronics, Power & Energy Conversion |
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| Depositing User: | Cron Job |
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| Date Deposited: | 07 Mar 2014 11:47 |
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| Last Modified: | 10 Mar 2014 16:34 |
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| DOI: | |
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