Bawedin, M and Uren, MJ and Udrea, F (2010) DRAM concept based on the hole gas transient effect in a AlGaN/GaN HEMT. SOLID STATE ELECTRON, 54. pp. 616-620. ISSN 0038-1101
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| Item Type: | Article |
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| Uncontrolled Keywords: | GaN AlGaN Nitride HEMT DRAM 1T-DRAM Hole gas Transient Hysteresis Schottky Parasitic HIGH-BREAKDOWN-VOLTAGE CURRENT COLLAPSE DEVICES CONTACTS 1T-DRAM CELL |
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| Subjects: | UNSPECIFIED |
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| Divisions: | Div B > Electronics, Power & Energy Conversion |
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| Depositing User: | Cron Job |
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| Date Deposited: | 28 Oct 2011 16:36 |
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| Last Modified: | 20 May 2013 01:37 |
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| DOI: | 10.1016/j.sse.2010.01.008 |
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