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DRAM concept based on the hole gas transient effect in a AlGaN/GaN HEMT

Bawedin, M and Uren, MJ and Udrea, F (2010) DRAM concept based on the hole gas transient effect in a AlGaN/GaN HEMT. SOLID STATE ELECTRON, 54. pp. 616-620. ISSN 0038-1101

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Item Type: Article
Uncontrolled Keywords: GaN AlGaN Nitride HEMT DRAM 1T-DRAM Hole gas Transient Hysteresis Schottky Parasitic HIGH-BREAKDOWN-VOLTAGE CURRENT COLLAPSE DEVICES CONTACTS 1T-DRAM CELL
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:32
Last Modified: 10 Mar 2014 16:34
DOI: 10.1016/j.sse.2010.01.008

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