Ryan, JT and Lenahan, PM and Robertson, J and Bersuker, G (2008) Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based metal-oxide-silicon field-effect transistors. APPL PHYS LETT, 92. -. ISSN 0003-6951Full text not available from this repository.
|Uncontrolled Keywords:||ELECTRON-SPIN-RESONANCE DIELECTRICS CENTERS STACKS|
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||15 Dec 2015 13:21|
|Last Modified:||05 May 2016 23:16|