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Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based metal-oxide-silicon field-effect transistors

Ryan, JT and Lenahan, PM and Robertson, J and Bersuker, G (2008) Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based metal-oxide-silicon field-effect transistors. APPL PHYS LETT, 92. -. ISSN 0003-6951

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Item Type: Article
Uncontrolled Keywords: ELECTRON-SPIN-RESONANCE DIELECTRICS CENTERS STACKS
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron job
Date Deposited: 16 Jul 2015 13:46
Last Modified: 05 Aug 2015 01:29
DOI: 10.1063/1.2902295