Ryan, JT and Lenahan, PM and Robertson, J and Bersuker, G (2008) Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based metal-oxide-silicon field-effect transistors. APPL PHYS LETT, 92. -. ISSN 0003-6951
Full text not available from this repository.
| Item Type: | Article |
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| Uncontrolled Keywords: | ELECTRON-SPIN-RESONANCE DIELECTRICS CENTERS STACKS |
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| Subjects: | UNSPECIFIED |
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| Divisions: | UNSPECIFIED |
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| Depositing User: | Cron Job |
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| Date Deposited: | 19 Jan 2012 10:11 |
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| Last Modified: | 11 Mar 2013 01:50 |
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| DOI: | 10.1063/1.2902295 |
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