Ryan, JT and Lenahan, PM and Robertson, J and Bersuker, G (2008) Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based metal-oxide-silicon field-effect transistors. APPL PHYS LETT, 92. -. ISSN 0003-6951
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|Item Type: ||Article|
|Uncontrolled Keywords: ||ELECTRON-SPIN-RESONANCE DIELECTRICS CENTERS STACKS|
|Depositing User: ||Cron Job|
|Date Deposited: ||19 Jan 2012 10:11|
|Last Modified: ||09 Sep 2013 01:15|
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