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The Soft Punchthrough plus Superjunction Insulated Gate Bipolar Transistor: A High Speed Structure With Enhanced Electron Injection

Antoniou, M and Udrea, F and Bauer, F and Nistor, I (2011) The Soft Punchthrough plus Superjunction Insulated Gate Bipolar Transistor: A High Speed Structure With Enhanced Electron Injection. IEEE T ELECTRON DEV, 58. pp. 769-775. ISSN 0018-9383

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Item Type: Article
Uncontrolled Keywords: Insulated gate bipolar transistor (IGBT) reverse conducting (RC) insulated gate bipolar transistor (IGBT) soft punchthrough superjunction (SJ) POWER DEVICE CONCEPT SWITCHING APPLICATIONS OPTIMIZATION MODULE IGBT
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 15 Dec 2015 13:29
Last Modified: 14 Feb 2016 00:02
DOI: 10.1109/TED.2010.2101076