Lin, L and Robertson, J (2009) Atomic mechanism of flat-band voltage shifts at La2O3, Al2O3 and Nb2O5 capping layers. In: UNSPECIFIED pp. 1743-1746..
Full text not available from this repository.
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|
| Uncontrolled Keywords: | High K metal gate stacks Advanced CMOS Electronic structure EFFECTIVE WORK FUNCTION METAL INTERFACES |
|---|
| Subjects: | UNSPECIFIED |
|---|
| Divisions: | UNSPECIFIED |
|---|
| Depositing User: | Cron Job |
|---|
| Date Deposited: | 19 Jan 2012 10:12 |
|---|
| Last Modified: | 12 Aug 2013 01:08 |
|---|
| DOI: | 10.1016/j.mee.2009.03.012 |
|---|
Actions (login required)
