Lin, L and Robertson, J (2009) Atomic mechanism of flat-band voltage shifts at La2O3, Al2O3 and Nb2O5 capping layers. In: UNSPECIFIED pp. 1743-1746..
Full text not available from this repository.| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Uncontrolled Keywords: | High K metal gate stacks Advanced CMOS Electronic structure EFFECTIVE WORK FUNCTION METAL INTERFACES |
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Solid State Electronics and Nanoscale Science |
| Depositing User: | Cron Job |
| Date Deposited: | 07 Mar 2014 11:43 |
| Last Modified: | 17 Mar 2014 15:01 |
| DOI: | 10.1016/j.mee.2009.03.012 |
Actions (login required)
| View Item |
