Lin, L and Robertson, J (2009) Atomic mechanism of flat-band voltage shifts at La2O3, Al2O3 and Nb2O5 capping layers. In: UNSPECIFIED pp. 1743-1746..
Full text not available from this repository.
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
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| Uncontrolled Keywords: | High K metal gate stacks Advanced CMOS Electronic structure EFFECTIVE WORK FUNCTION METAL INTERFACES |
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| Subjects: | UNSPECIFIED |
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| Divisions: | UNSPECIFIED |
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| Depositing User: | Cron Job |
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| Date Deposited: | 19 Jan 2012 10:12 |
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| Last Modified: | 17 May 2013 19:07 |
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| DOI: | 10.1016/j.mee.2009.03.012 |
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