Lin, L and Robertson, J (2009) Atomic mechanism of flat-band voltage shifts at La2O3, Al2O3 and Nb2O5 capping layers. In: UNSPECIFIED pp. 1743-1746..
Full text not available from this repository.| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Uncontrolled Keywords: | High K metal gate stacks Advanced CMOS Electronic structure EFFECTIVE WORK FUNCTION METAL INTERFACES |
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Solid State Electronics and Nanoscale Science |
| Depositing User: | Cron Job |
| Date Deposited: | 09 Dec 2016 17:32 |
| Last Modified: | 26 Jun 2017 04:49 |
| DOI: |
