Lin, L and Robertson, J (2009) Atomic mechanism of flat-band voltage shifts at La2O3, Al2O3 and Nb2O5 capping layers. In: UNSPECIFIED pp. 1743-1746..
Full text not available from this repository.Item Type: | Conference or Workshop Item (UNSPECIFIED) |
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Uncontrolled Keywords: | High K metal gate stacks Advanced CMOS Electronic structure EFFECTIVE WORK FUNCTION METAL INTERFACES |
Subjects: | UNSPECIFIED |
Divisions: | Div B > Solid State Electronics and Nanoscale Science |
Depositing User: | Cron Job |
Date Deposited: | 17 Jul 2017 19:23 |
Last Modified: | 19 Apr 2018 02:48 |
DOI: |