CUED Publications database

Atomic mechanism of flat-band voltage shifts at La2O3, Al2O3 and Nb2O5 capping layers

Lin, L and Robertson, J (2009) Atomic mechanism of flat-band voltage shifts at La2O3, Al2O3 and Nb2O5 capping layers. In: UNSPECIFIED pp. 1743-1746..

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: High K metal gate stacks Advanced CMOS Electronic structure EFFECTIVE WORK FUNCTION METAL INTERFACES
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:43
Last Modified: 11 Aug 2014 01:10
DOI: 10.1016/j.mee.2009.03.012