CUED Publications database

Atomic mechanism of flat-band voltage shifts at La2O3, Al2O3 and Nb2O5 capping layers

Lin, L and Robertson, J (2009) Atomic mechanism of flat-band voltage shifts at La2O3, Al2O3 and Nb2O5 capping layers. In: UNSPECIFIED pp. 1743-1746..

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: High K metal gate stacks Advanced CMOS Electronic structure EFFECTIVE WORK FUNCTION METAL INTERFACES
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 18 May 2016 18:25
Last Modified: 23 Aug 2016 23:19
DOI: