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IMPROVEMENT IN THE THICKNESS UNIFORMITY OF SILICON-ON-INSULATOR LAYERS FORMED BY DUAL ELECTRON-BEAM RECRYSTALLIZATION

HOPPER, GF and MCMAHON, RA and BARFOOT, KM (1991) IMPROVEMENT IN THE THICKNESS UNIFORMITY OF SILICON-ON-INSULATOR LAYERS FORMED BY DUAL ELECTRON-BEAM RECRYSTALLIZATION. J APPL PHYS, 69. pp. 2183-2189. ISSN 0021-8979

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Item Type: Article
Uncontrolled Keywords: PHOSPHOSILICATE GLASS SI FILMS POLYSILICON DEPOSITION STRESS REFLOW
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:32
Last Modified: 10 Mar 2014 18:02
DOI:

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