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IMPROVEMENT IN THE THICKNESS UNIFORMITY OF SILICON-ON-INSULATOR LAYERS FORMED BY DUAL ELECTRON-BEAM RECRYSTALLIZATION

HOPPER, GF and MCMAHON, RA and BARFOOT, KM (1991) IMPROVEMENT IN THE THICKNESS UNIFORMITY OF SILICON-ON-INSULATOR LAYERS FORMED BY DUAL ELECTRON-BEAM RECRYSTALLIZATION. J APPL PHYS, 69. pp. 2183-2189. ISSN 0021-8979

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Item Type: Article
Uncontrolled Keywords: PHOSPHOSILICATE GLASS SI FILMS POLYSILICON DEPOSITION STRESS REFLOW
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 15 Dec 2015 12:45
Last Modified: 05 May 2016 06:38
DOI: