Tse, K and Robertson, J (2007) Defects and their passivation in high K gate oxides. MICROELECTRON ENG, 84. pp. 663-668. ISSN 0167-9317
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| Item Type: | Article |
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| Uncontrolled Keywords: | oxides defects passivation calculation DIELECTRIC-CONSTANT OXIDES OXYGEN VACANCY SILICON HYDROGEN NITROGEN STATES HFO2 1ST-PRINCIPLES DEVICES |
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| Subjects: | UNSPECIFIED |
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| Divisions: | UNSPECIFIED |
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| Depositing User: | Cron Job |
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| Date Deposited: | 19 Jan 2012 10:11 |
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| Last Modified: | 17 May 2013 19:06 |
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| DOI: | 10.1016/j.mee.2006.12.009 |
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