Csanyi, G and Engeness, TD and Ismail-Beigi, S and Arias, TA (2000) New physics of the 30 degrees partial dislocation in silicon revealed through ab initio calculation. In: UNSPECIFIED pp. 10029-10037..
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| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
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| Uncontrolled Keywords: | 90-DEGREES PARTIAL DISLOCATION MOLECULAR-DYNAMICS DEFORMED SILICON ENERGY DEFECTS MOBILITY MODELS CORE |
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| Subjects: | UNSPECIFIED |
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| Divisions: | Div C > Materials Engineering |
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| Depositing User: | Cron Job |
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| Date Deposited: | 28 Oct 2011 16:39 |
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| Last Modified: | 11 Mar 2013 01:57 |
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| DOI: | |
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