Robertson, J (2008) Maximizing performance for higher K gate dielectrics. J APPL PHYS, 104. -. ISSN 0021-8979
Full text not available from this repository.
| Item Type: | Article |
|---|
| Uncontrolled Keywords: | hafnium compounds high-k dielectric thin films permittivity silicon compounds zirconium compounds EFFECTIVE WORK FUNCTION OXIDE THIN-FILMS ELECTRICAL-PROPERTIES BAND-STRUCTURE STACK TECHNOLOGY METAL-OXIDES V-FB SILICON LANTHANUM ZIRCONIA |
|---|
| Subjects: | UNSPECIFIED |
|---|
| Divisions: | UNSPECIFIED |
|---|
| Depositing User: | Cron Job |
|---|
| Date Deposited: | 19 Jan 2012 10:12 |
|---|
| Last Modified: | 27 May 2013 01:24 |
|---|
| DOI: | 10.1063/1.3041628 |
|---|
Actions (login required)
