CUED Publications database

Maximizing performance for higher K gate dielectrics

Robertson, J (2008) Maximizing performance for higher K gate dielectrics. J APPL PHYS, 104. -. ISSN 0021-8979

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Item Type: Article
Uncontrolled Keywords: hafnium compounds high-k dielectric thin films permittivity silicon compounds zirconium compounds EFFECTIVE WORK FUNCTION OXIDE THIN-FILMS ELECTRICAL-PROPERTIES BAND-STRUCTURE STACK TECHNOLOGY METAL-OXIDES V-FB SILICON LANTHANUM ZIRCONIA
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 18 May 2016 18:11
Last Modified: 23 Jul 2016 23:58
DOI: 10.1063/1.3041628