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Maximizing performance for higher K gate dielectrics

Robertson, J (2008) Maximizing performance for higher K gate dielectrics. J APPL PHYS, 104. -. ISSN 0021-8979

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Item Type: Article
Uncontrolled Keywords: hafnium compounds high-k dielectric thin films permittivity silicon compounds zirconium compounds EFFECTIVE WORK FUNCTION OXIDE THIN-FILMS ELECTRICAL-PROPERTIES BAND-STRUCTURE STACK TECHNOLOGY METAL-OXIDES V-FB SILICON LANTHANUM ZIRCONIA
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:28
Last Modified: 28 Jul 2014 01:07
DOI: 10.1063/1.3041628

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