CUED Publications database

Model of interface states at III-V oxide interfaces

Robertson, J (2009) Model of interface states at III-V oxide interfaces. APPL PHYS LETT, 94. -. ISSN 0003-6951

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Item Type: Article
Uncontrolled Keywords: dangling bonds field effect transistors gallium arsenide III-V semiconductors indium compounds oxidation ELECTRONIC-STRUCTURE GAP STATES SEMICONDUCTORS GAAS ACCUMULATION MECHANISM SURFACES DEFECTS
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 15 Dec 2015 12:58
Last Modified: 01 May 2016 03:23
DOI: 10.1063/1.3120554