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Model of interface states at III-V oxide interfaces

Robertson, J (2009) Model of interface states at III-V oxide interfaces. APPL PHYS LETT, 94. -. ISSN 0003-6951

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Item Type: Article
Uncontrolled Keywords: dangling bonds field effect transistors gallium arsenide III-V semiconductors indium compounds oxidation ELECTRONIC-STRUCTURE GAP STATES SEMICONDUCTORS GAAS ACCUMULATION MECHANISM SURFACES DEFECTS
Depositing User: Unnamed user with email
Date Deposited: 16 Jul 2015 13:21
Last Modified: 29 Nov 2015 07:43
DOI: 10.1063/1.3120554