Robertson, J (2009) Model of interface states at III-V oxide interfaces. APPL PHYS LETT, 94. -. ISSN 0003-6951
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| Item Type: | Article |
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| Uncontrolled Keywords: | dangling bonds field effect transistors gallium arsenide III-V semiconductors indium compounds oxidation ELECTRONIC-STRUCTURE GAP STATES SEMICONDUCTORS GAAS ACCUMULATION MECHANISM SURFACES DEFECTS |
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| Subjects: | UNSPECIFIED |
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| Divisions: | UNSPECIFIED |
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| Depositing User: | Cron Job |
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| Date Deposited: | 19 Jan 2012 10:12 |
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| Last Modified: | 19 May 2013 07:10 |
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| DOI: | 10.1063/1.3120554 |
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