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DOUBLE 2-DIMENSIONAL ELECTRON-GAS STRUCTURE FORMED BY MOLECULAR-BEAM EPITAXY REGROWTH ON AN EX-SITU PATTERNED N+-GAAS BACK GATE

EVANS, RJ and GRIMSHAW, MP and BURROUGHES, JH and LEADBEATER, ML and TRIBBLE, MJ and RITCHIE, DA and JONES, GAC and PEPPER, M (1994) DOUBLE 2-DIMENSIONAL ELECTRON-GAS STRUCTURE FORMED BY MOLECULAR-BEAM EPITAXY REGROWTH ON AN EX-SITU PATTERNED N+-GAAS BACK GATE. APPL PHYS LETT, 65. pp. 1943-1945. ISSN 0003-6951

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Item Type: Article
Uncontrolled Keywords: MOBILITY TRANSISTOR PARALLEL CONDUCTION CHANNEL
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:11
Last Modified: 08 Aug 2017 01:52
DOI: