Khan, MZR and Hasko, DG and Saifullah, MSM and Welland, ME (2008) Single shot measurement of the lifetime of a trapped electron in the gate dielectric of a high-k field effect transistor. APPL PHYS LETT, 93. -. ISSN 0003-6951Full text not available from this repository.
|Uncontrolled Keywords:||dielectric materials electron traps field effect transistors Q-factor titanium compounds QUANTUM-DOT SPIN|
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||15 Dec 2015 13:21|
|Last Modified:||09 Feb 2016 22:57|