Khan, MZR and Hasko, DG and Saifullah, MSM and Welland, ME (2008) Single shot measurement of the lifetime of a trapped electron in the gate dielectric of a high-k field effect transistor. APPL PHYS LETT, 93. -. ISSN 0003-6951Full text not available from this repository.
|Uncontrolled Keywords:||dielectric materials electron traps field effect transistors Q-factor titanium compounds QUANTUM-DOT SPIN|
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Unnamed user with email email@example.com|
|Date Deposited:||18 May 2016 18:42|
|Last Modified:||29 Jun 2016 23:33|