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A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer

Luo, XR and Wang, YG and Deng, H and Udrea, F (2010) A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer. CHINESE PHYS B, 19. -. ISSN 1674-1056

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Item Type: Article
Uncontrolled Keywords: silicon-on-insulator low k dielectric electric field breakdown voltage BREAKDOWN VOLTAGE ANALYTICAL-MODEL SOI TECHNOLOGY DEVICES FILM
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:47
Last Modified: 11 Aug 2014 01:10
DOI:

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