Luo, XR and Wang, YG and Deng, H and Udrea, F (2010) A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer. CHINESE PHYS B, 19. -. ISSN 1674-1056
Full text not available from this repository.Item Type: | Article |
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Uncontrolled Keywords: | silicon-on-insulator low k dielectric electric field breakdown voltage BREAKDOWN VOLTAGE ANALYTICAL-MODEL SOI TECHNOLOGY DEVICES FILM |
Subjects: | UNSPECIFIED |
Divisions: | Div B > Electronics, Power & Energy Conversion |
Depositing User: | Cron Job |
Date Deposited: | 17 Jul 2017 19:13 |
Last Modified: | 10 Apr 2021 00:24 |
DOI: |