Luo, XR and Wang, YG and Deng, H and Udrea, F (2010) A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer. CHINESE PHYS B, 19. -. ISSN 1674-1056
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | silicon-on-insulator low k dielectric electric field breakdown voltage BREAKDOWN VOLTAGE ANALYTICAL-MODEL SOI TECHNOLOGY DEVICES FILM |
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Electronics, Power & Energy Conversion |
| Depositing User: | Cron Job |
| Date Deposited: | 17 Jul 2017 19:13 |
| Last Modified: | 22 May 2018 07:43 |
| DOI: |
