Luo, XR and Wang, YG and Deng, H and Udrea, F (2010) A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer. CHINESE PHYS B, 19. -. ISSN 1674-1056
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | silicon-on-insulator low k dielectric electric field breakdown voltage BREAKDOWN VOLTAGE ANALYTICAL-MODEL SOI TECHNOLOGY DEVICES FILM |
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Electronics, Power & Energy Conversion |
| Depositing User: | Cron Job |
| Date Deposited: | 09 Dec 2016 17:29 |
| Last Modified: | 26 Jun 2017 05:12 |
| DOI: |
