Luo, XR and Wang, YG and Deng, H and Udrea, F (2010) A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer. CHINESE PHYS B, 19. -. ISSN 1674-1056
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | silicon-on-insulator low k dielectric electric field breakdown voltage BREAKDOWN VOLTAGE ANALYTICAL-MODEL SOI TECHNOLOGY DEVICES FILM |
| Subjects: | UNSPECIFIED |
| Divisions: | UNSPECIFIED |
| Depositing User: | Cron job |
| Date Deposited: | 04 Feb 2015 22:46 |
| Last Modified: | 05 Feb 2015 01:02 |
| DOI: |
