CUED Publications database

Atomic bonding and disorder at Ge:GeO2 interfaces

Li, H and Lin, L and Xiong, K and Robertson, J (2011) Atomic bonding and disorder at Ge:GeO2 interfaces. In: UNSPECIFIED pp. 1564-1568..

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: Germanium Germanium dioxide High mobility channel Passivation Calculation Electronic structure Defects Band offsets TRANSITION REGIONS SI-SIO2 INTERFACES SILICON DIOXIDE OXYGEN VACANCY DEFECTS SIO2 MOBILITY MOSFETS UNIVERSALITY GERMANIUM
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:45
Last Modified: 08 Sep 2014 01:10
DOI: 10.1016/j.mee.2011.03.136