Luo, XR and Zhang, B and Lei, TF and Li, ZJ and Xiao, ZQ and Hsu, WCW and Udrea, F (2010) Numerical and Experimental Investigation on a Novel High-Voltage (> 600-V) SOI LDMOS in a Self-Isolation HVIC. IEEE T ELECTRON DEV, 57. pp. 3033-3043. ISSN 0018-9383
Full text not available from this repository.
| Item Type: | Article |
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| Uncontrolled Keywords: | Electric fields high-voltage techniques power semiconductor devices silicon-on-insulator (SOI) technology BREAKDOWN VOLTAGE BURIED LAYER DEVICES TECHNOLOGY MOSFET LIGBT FIELD |
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| Subjects: | UNSPECIFIED |
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| Divisions: | Div B > Electronics, Power & Energy Conversion |
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| Depositing User: | Cron Job |
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| Date Deposited: | 28 Oct 2011 16:36 |
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| Last Modified: | 20 May 2013 01:35 |
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| DOI: | 10.1109/TED.2010.2066279 |
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