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Numerical and Experimental Investigation on a Novel High-Voltage (> 600-V) SOI LDMOS in a Self-Isolation HVIC

Luo, XR and Zhang, B and Lei, TF and Li, ZJ and Xiao, ZQ and Hsu, WCW and Udrea, F (2010) Numerical and Experimental Investigation on a Novel High-Voltage (> 600-V) SOI LDMOS in a Self-Isolation HVIC. IEEE T ELECTRON DEV, 57. pp. 3033-3043. ISSN 0018-9383

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Item Type: Article
Uncontrolled Keywords: Electric fields high-voltage techniques power semiconductor devices silicon-on-insulator (SOI) technology BREAKDOWN VOLTAGE BURIED LAYER DEVICES TECHNOLOGY MOSFET LIGBT FIELD
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:50
Last Modified: 10 Mar 2014 16:34
DOI: 10.1109/TED.2010.2066279

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