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Mechanisms for defect creation and removal in hydrogenated and deuterated amorphous silicon studied using thin film transistors

Flewitt, AJ and Lin, S and Milne, WI and Wehrspohn, RB and Powell, MJ (2006) Mechanisms for defect creation and removal in hydrogenated and deuterated amorphous silicon studied using thin film transistors. In: Symposium A: Amorphous and Nanocrystalline Silicon-Based Films--2006, 17-4-2006 to 21-4-2006, San Francisco, CA, US pp. 449-460..

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Additional Information: Id number = Paper No: 0910-A19-01 Event type = other
Uncontrolled Keywords: IMPROVED STABILITY DIFFUSION METASTABILITY ALLOY MODEL SI
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron Job
Date Deposited: 20 Dec 2011 12:10
Last Modified: 11 Mar 2013 02:01
DOI:

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