Bryant, AT and Lu, LQ and Santi, E and Hudgins, JL and Palmer, PR (2008) Modeling of IGBT resistive and inductive turn-on behavior. IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 44. pp. 904-914. ISSN 0093-9994
Full text not available from this repository.
| Item Type: | Article |
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| Uncontrolled Keywords: | compact semiconductor device models insulated-gate bipolar-transistor (IGBT) turn-on interaction physics-based semiconductor modeling DIODE OPTIMIZATION SIMULATION LOSSES |
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| Subjects: | UNSPECIFIED |
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| Divisions: | Div B > Electronics, Power & Energy Conversion |
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| Depositing User: | Cron Job |
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| Date Deposited: | 28 Oct 2011 16:37 |
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| Last Modified: | 20 May 2013 01:34 |
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| DOI: | 10.1109/TIA.2008.921384 |
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