CUED Publications database

Physics-Based Model of Planar-Gate IGBT Including MOS Side Two-Dimensional Effects

Lu, LQ and Bryant, A and Hudgins, JL and Palmer, PR and Santi, E (2010) Physics-Based Model of Planar-Gate IGBT Including MOS Side Two-Dimensional Effects. IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 46. pp. 2556-2567. ISSN 0093-9994

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Item Type: Article
Uncontrolled Keywords: Insulated gate bipolar transistor (IGBT) model physics-based model power semiconductor modeling CIRCUIT OPTIMIZATION DIODE STATE SPICE
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 16 Jul 2015 14:04
Last Modified: 26 Jul 2015 00:01
DOI: 10.1109/TIA.2010.2071190