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Are Al2O3 and MgO tunnel barriers suitable for spin injection in graphene?

Dlubak, B and Seneor, P and Anane, A and Barraud, C and Deranlot, C and Deneuve, D and Servet, B and Mattana, R and Petroff, F and Fert, A (2010) Are Al2O3 and MgO tunnel barriers suitable for spin injection in graphene? APPL PHYS LETT, 97. -. ISSN 0003-6951

Full text not available from this repository.
Item Type: Article
Uncontrolled Keywords: ROOM-TEMPERATURE CARBON SEMICONDUCTOR TRANSPORT DEVICES FILMS
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 18 May 2016 17:58
Last Modified: 25 Jun 2016 03:59
DOI: 10.1063/1.3476339