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Atomic mechanism of electric dipole formed at high-K: SiO2 interface

Lin, L and Robertson, J (2011) Atomic mechanism of electric dipole formed at high-K: SiO2 interface. J APPL PHYS, 109. -. ISSN 0021-8979

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Item Type: Article
Uncontrolled Keywords: FIELD-EFFECT TRANSISTORS GATE WORK FUNCTION BAND OFFSETS METAL GATES LAYER DIELECTRICS DEPOSITION MOBILITY DEVICES
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron job
Date Deposited: 04 Feb 2015 22:13
Last Modified: 07 May 2015 11:08
DOI: 10.1063/1.3583655