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Atomic mechanism of electric dipole formed at high-K: SiO2 interface

Lin, L and Robertson, J (2011) Atomic mechanism of electric dipole formed at high-K: SiO2 interface. J APPL PHYS, 109. -. ISSN 0021-8979

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Item Type: Article
Uncontrolled Keywords: FIELD-EFFECT TRANSISTORS GATE WORK FUNCTION BAND OFFSETS METAL GATES LAYER DIELECTRICS DEPOSITION MOBILITY DEVICES
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 16 Jul 2015 13:21
Last Modified: 29 Aug 2015 21:50
DOI: 10.1063/1.3583655