Lin, L and Robertson, J (2011) Atomic mechanism of electric dipole formed at high-K: SiO2 interface. J APPL PHYS, 109. -. ISSN 0021-8979
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| Item Type: | Article |
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| Uncontrolled Keywords: | FIELD-EFFECT TRANSISTORS GATE WORK FUNCTION BAND OFFSETS METAL GATES LAYER DIELECTRICS DEPOSITION MOBILITY DEVICES |
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| Subjects: | UNSPECIFIED |
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| Divisions: | UNSPECIFIED |
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| Depositing User: | Cron Job |
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| Date Deposited: | 19 Jan 2012 10:12 |
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| Last Modified: | 11 Mar 2013 01:51 |
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| DOI: | 10.1063/1.3583655 |
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