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The Trench insulated gate bipolar transistor - A high power switching device

Udrea, F and Amaratunga, G (1997) The Trench insulated gate bipolar transistor - A high power switching device. MICROELECTR J, 28. pp. 1-12. ISSN 0026-2692

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron job
Date Deposited: 04 Feb 2015 22:22
Last Modified: 05 Feb 2015 00:31
DOI: