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The Trench insulated gate bipolar transistor - A high power switching device

Udrea, F and Amaratunga, G (1997) The Trench insulated gate bipolar transistor - A high power switching device. MICROELECTR J, 28. pp. 1-12. ISSN 0026-2692

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 09 Dec 2016 18:08
Last Modified: 25 Feb 2017 23:18
DOI: